GSFQ4953

$0.31

Description：MOSFET 2P-CH 30V 5.4A 8SOP
Series：-

SKU:698ece06479e Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

GSFQ4953 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET 2P-CH 30V 5.4A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GSFQ4953

Description：MOSFET 2P-CH 30V 5.4A 8SOP
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
Rds On (Max) @ Id, Vgs：58mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：514pF @ 15V
Power - Max：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for GSFQ4953

GSFQ4953

FET, MOSFET Arrays Overview

The GSFQ4953 is a dual P-channel MOSFET featuring a -30V drain-source voltage (VDS) and a continuous drain current (ID) of -5.4A at steady-state conditions. It exhibits a maximum on-resistance (RDS(ON)) of 58mΩ at VGS=-10V and 85mΩ at VGS=-4.5V. The device supports a pulsed drain current (IDM) of -20A and offers a power dissipation rating of 2W with a junction-to-ambient thermal resistance (RθJA) of 50°C/W. Operating temperatures range from -55°C to +150°C, housed in an SOP-8 package.

FET, MOSFET Arrays Feature Summary

Utilizes advanced MOSFET process technology for high cell density and low on-resistance.
Optimized for high efficiency switched mode power supplies.
Features fast switching capabilities and reverse body recovery characteristics.

FET, MOSFET Arrays Applications

High efficiency switch mode power supplies
General purpose load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging details. Confirm that the requested quantity aligns with the standard shipping unit specified in the order information section. Ensure the component marking matches the datasheet requirements for identification purposes during assembly.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel configuration is required within a compact SOP-8 footprint. Evaluate the thermal performance based on the 50°C/W junction-to-ambient resistance value for your specific PCB layout. Consider the gate charge specifications for driving requirements in high-frequency switching environments.

FET, MOSFET Arrays Part Context

This component belongs to the category of dual P-channel enhancement mode MOSFETs designed for power management applications. It integrates two independent P-channel devices into a single package to save board space. The technology focuses on reducing conduction losses through optimized trench cell structures.

FET, MOSFET Arrays Replacement Considerations

Cross-reference electrical parameters such as VDS, ID, and RDS(ON) with alternative dual P-channel MOSFETs in SOP-8 packages. Verify pinout compatibility and thermal characteristics before substitution.