GSFQ6808

FET, MOSFET Arrays Overview

The GSFQ6808 is a dual N-channel MOSFET manufactured by Good-Ark Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 10 A at 25°C case temperature. The device achieves a maximum on-resistance (Rds(on)) of 30 mΩ at Vgs=10V and Id=4A. Key electrical parameters include a gate threshold voltage (Vgs(th)) ranging from 1.2 V to 2.5 V, a total gate charge (Qg) of up to 24 nC at Vgs=10V, and an input capacitance (Ciss) of 1720 pF at Vds=30V. The component supports a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with integrated body diodes for synchronous rectification
• Advanced MOSFET process technology enabling high cell density and low on-resistance
• Optimized for fast switching and reverse body recovery characteristics
• Low gate charge combined with low on-resistance for improved efficiency

FET, MOSFET Arrays Applications

• High efficiency switch mode power supplies
• DC-DC converters
• Power management circuits requiring compact dual-channel solutions

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging configurations such as tape and reel quantities or cut tape options. Ensure that the requested part number matches the SOP-8 package outline dimensions provided in the datasheet to guarantee compatibility with automated placement equipment and PCB footprints.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring two independent N-channel switches within a single small footprint. The 60 V rating and 10 A current capability suit low-voltage power distribution applications. Evaluate thermal performance based on the specified RθJA and RθJC values relative to the expected ambient conditions and copper pad area on the printed circuit board.

FET, MOSFET Arrays Part Context

This dual MOSFET belongs to the GSFQ series from Good-Ark Semiconductor, designed for modern power electronics where space constraints are critical. The SOP-8 package provides a balance between thermal dissipation capabilities and board real estate efficiency compared to larger through-hole alternatives.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution lists for verified equivalents. Cross-reference pinouts and absolute maximum ratings carefully before replacing existing designs.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the GSFQ6808?

The maximum continuous drain current is 10 A when measured at a case temperature of 25°C.

Does the GSFQ6808 contain internal diodes?

Yes, each channel includes an integrated body diode suitable for synchronous rectification applications.

What is the typical gate threshold voltage range?

The gate threshold voltage ranges from a minimum of 1.2 V to a maximum of 2.5 V under standard test conditions.