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Product Detailed Parameters
- Description：IGBT MOD 1200V 160A 1710W
- Series：Amp+™
- Mfr：SemiQ
- Package：Bulk
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 80A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：160 A
- Power - Max：1710 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：7 nF @ 25 V
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Overview
The GSID080A120B1A5 is a Silicon Carbide (SiC) IGBT module manufactured by SemiQ. It features an N-Channel configuration with a drain-to-source breakdown voltage of 1200 V and a continuous drain current of 80 A. The device utilizes screw mount installation and operates within a temperature range of -40°C to +175°C. This component belongs to the GSID series, designed for high-voltage power semiconductor applications requiring efficient standard or custom SiC solutions.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for high-voltage performance
- Configured as a single N-Channel IGBT module
- Supports screw mount installation style
Applications
- High-voltage power semiconductor applications
- Efficient standard power conversion systems
- Custom SiC power device implementations
Procurement Notes
Verify product status carefully before procurement, as this specific part number is listed as obsolete in available distributor records. Confirm availability through authorized channels or consider active alternatives from the manufacturer's current portfolio. Ensure that any substitute components meet the required 1200V and 80A specifications for your application design.
Selection Notes
Select this component only if legacy compatibility with the GSID series is required. Evaluate the transition to active SiC MOSFET modules like the GCMS series for new designs. Consider thermal management requirements given the 175°C maximum operating temperature and verify that the single IGBT configuration aligns with the circuit topology needs.
Part Context
This module is part of SemiQ's broader portfolio of high-quality Silicon Carbide power semiconductors. The company specializes in providing both standard and custom SiC devices tailored for demanding high-voltage applications. The GSID series represents their earlier IGBT-based offerings, distinct from their newer MOSFET modules.
Replacement Considerations
Public confirmed substitute part numbers are not explicitly documented in the provided source material. Users should consult official SemiQ documentation for recommended obsolescence replacements or contact the manufacturer directly for valid cross-reference data.
