GSID100A120T2C1

Description：IGBT MOD 1200V 200A 640W
Series：Amp+™

SKU:532ed3579c68 Category: IGBT Modules Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 200A 640W
Series：Amp+™
Mfr：SemiQ
Package：Bulk
IGBT Type：-
Configuration：Three Phase Inverter
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 100A
Input：Three Phase Bridge Rectifier
NTC Thermistor：Yes
Operating Temperature：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：200 A
Power - Max：640 W
Current - Collector Cutoff (Max)：1 mA
Input Capacitance (Cies) @ Vce：13.7 nF @ 25 V

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GSID100A120T2C1

Overview

The SemiQ GSID100A120T2C1 is a silicon carbide (SiC) IGBT module designed for high-power applications. It features a 1200V drain-source breakdown voltage and supports a continuous collector current of 200A. The device operates within a temperature range of -40°C to 150°C and has a maximum power dissipation of 640W. Key electrical characteristics include a saturated collector-emitter voltage ranging from 1.90V to 2.20V and a gate-emitter voltage tolerance of -20V to +20V.

Feature Summary

Utilizes SiC technology for enhanced thermal performance and switching efficiency
Configured as a three-phase inverter module for robust power conversion
Features a base-mounted package design suitable for high-current thermal management

Applications

Three-phase inverter systems
Industrial motor drives
High-efficiency power supply units

Procurement Notes

Verify the specific datasheet version for accurate thermal resistance values and gate drive requirements before integration. Confirm that the mounting torque specifications are strictly followed to ensure reliable electrical contact and thermal interface integrity during assembly.

Selection Notes

Select this component when a 1200V rating and 200A continuous current capacity are required. Consider the 640W power dissipation limit and the -40°C to 150°C operating range to ensure compatibility with the target system's thermal environment and load profile.

Part Context

This part belongs to SemiQ's Amp+™ series, which focuses on advanced power modules. It represents a discrete solution within the broader category of semiconductor transistors and IGBTs, offering specialized capabilities for demanding industrial and energy applications.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Ensure compatibility with existing gate driver circuits and thermal interfaces when evaluating alternative components.