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Product Detailed Parameters
- Description：IGBT MODULE 1200V 300A 940W D3
- Series：Amp+™
- Mfr：SemiQ
- Package：Bulk
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 150A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：D-3 Module
- Supplier Device Package：D3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：300 A
- Power - Max：940 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：14 nF @ 25 V
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Overview
The GSID150A120S3B1 is a Silicon Carbide Schottky Barrier Diode (SBD) module manufactured by SemiQ. It features a 1200V reverse voltage rating and a continuous forward current of 150A. The device utilizes an S3 package with screw mount installation. Key electrical parameters include a maximum forward voltage of 2.4V at 25°C and a peak repetitive reverse current of 10uA at 25°C. The module supports a junction temperature range from -40°C to +175°C and has a power dissipation rating of 600W at case temperature.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for high-temperature operation
- Designed as a single diode configuration in a robust power module
- Features screw mount installation for secure mechanical attachment
Applications
- High-frequency DC-DC converters
- Solar micro-inverters
- Uninterruptible Power Supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the S3 package dimensions match the thermal management design requirements. Ensure that gate drive or circuit protection components are compatible with the specified voltage and current ratings for reliable system integration.
Selection Notes
Select this component when a high-voltage, high-current SiC diode is required for efficient power conversion. Compare the forward voltage drop against system efficiency targets and ensure the thermal resistance allows for adequate heat sinking within the 175°C junction limit. Verify that the 150A current rating meets the peak load requirements of the application circuit.
Part Context
This part belongs to the SemiQ GSID series of Silicon Carbide Schottky Barrier Diodes. The series is designed for high-efficiency power electronics applications requiring low switching losses and high thermal stability. The S3 package provides a standardized form factor for easy integration into existing power module footprints.
Replacement Considerations
Direct replacements must match the 1200V rating, 150A current capacity, and S3 package outline. Verify pin compatibility and thermal characteristics. Consult manufacturer cross-reference lists for equivalent SiC SBD modules with similar electrical performance and mounting requirements.
