GSJT65R220

$2.44

Description：MOSFET, N-CH, SINGLE, 20.00A, 65
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e6dbb26515ef Category: Single FETs, MOSFETs Brand: Good-Ark Semiconductor

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Product introduction

GSJT65R220 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, SINGLE, 20.00A, 65. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GSJT65R220

Description：MOSFET, N-CH, SINGLE, 20.00A, 65
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：220mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1718 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：208W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for GSJT65R220

GSJT65R220

Single FETs, MOSFETs Overview

The GSJT65R220 is a 650V N-Channel MOSFET utilizing advanced process technology for high cell density and low on-resistance. It features a maximum drain-source voltage of 650V, a continuous drain current of 20A at 25°C, and a static drain-to-source on-resistance of 0.22Ω max at VGS=10V. The device operates within a junction temperature range of -55°C to +150°C and is housed in a TO-263 (D2PAK) package.

Single FETs, MOSFETs Feature Summary

Advanced MOSFET process technology achieving high cell density
Low on-resistance combined with low gate charge
Fast switching capabilities with reverse body recovery

Single FETs, MOSFETs Applications

High efficiency switched mode power supplies
General purpose power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with Good-Ark Semiconductor or authorized distributors before procurement. Confirm that the TO-263 (D2PAK) package dimensions and marking codes match the design requirements. Ensure thermal management solutions align with the specified junction-to-case and junction-to-ambient thermal resistance values for the intended operating environment.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high breakdown voltage and moderate current handling in surface-mount configurations. Evaluate the thermal performance against the specified RθJA and RθJC values to ensure reliable operation under steady-state and pulsed conditions. Consider the gate charge characteristics for driving circuit compatibility in high-frequency switching applications.

Single FETs, MOSFETs Part Context

This part belongs to the series of high-voltage N-Channel MOSFETs designed for power management. It utilizes modern semiconductor fabrication techniques to optimize the trade-off between conduction losses and switching speeds. The device is engineered to provide reliability and efficiency in compact power supply architectures.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility, electrical ratings, and thermal characteristics when considering alternatives.