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GT015N06TL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N-CH 60V 350A 350W 1M(MA. Review the specifications below when checking this part for your BOM.
The GT015N06TL is an N-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a 60V drain-source voltage rating and supports a continuous drain current of 350A at 25°C case temperature. Key electrical parameters include a maximum RDS(on) of 1.0mΩ at VGS=10V and 1.3mΩ at VGS=4.5V. It is housed in a TOLL-8L package with a junction-to-case thermal resistance of 0.36°C/W.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging quantity and reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as these details are not included in the technical datasheet.
Select this component for applications requiring high current handling and low conduction losses. Evaluate the thermal resistance and safe operating area relative to the system's heat dissipation capabilities. Ensure the gate drive voltage meets the requirements for optimal RDS(on) performance.
This part belongs to Goford Semiconductor's lineup of power MOSFETs designed for industrial and consumer electronics. The TOLL-8L package is engineered for superior thermal management compared to traditional packages, allowing for higher power density in space-constrained designs.
No publicly confirmed substitute part numbers are available in the provided documentation.
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