GT100N12T

$1.99

Description：N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Series：SGT
Mfr：Goford Semiconductor
Package：Tube

SKU:7d855c338b64 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

GT100N12T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is N120V,RD(MAX). Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GT100N12T

Description：N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Series：SGT
Mfr：Goford Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：120 V
Current - Continuous Drain (Id) @ 25°C：70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10mOhm @ 35A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3050 pF @ 60 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for GT100N12T

GT100N12T

Single FETs, MOSFETs Overview

The GT100N12T is an N-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a Drain-Source Voltage (VDS) of 120 V and a Continuous Drain Current (ID) of 70 A at 25°C case temperature. The maximum Drain-Source On-Resistance (RDS(on)) is 10 mΩ at VGS = 10V and ID = 20A. It operates within a junction temperature range of -55°C to 150°C and is housed in a TO-220 package.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for low gate charge and high performance
100% avalanche tested for reliability
RoHS compliant construction

Single FETs, MOSFETs Applications

Power switch
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation, as packaging quantities may vary. Confirm that the component meets RoHS compliance requirements for your assembly process. Ensure thermal management solutions are adequate for the specified power dissipation limits under your operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 120 V rating with high current handling capabilities up to 70 A. The low RDS(on) specification makes it suitable for applications prioritizing conduction efficiency. Verify that the TO-220 package footprint fits the mechanical constraints of the target design.

Single FETs, MOSFETs Part Context

This part belongs to the GT series of N-Channel Enhancement Mode Power MOSFETs from Goford Semiconductor. These devices are engineered using trench technology to optimize switching speed and reduce drive losses. The series targets general-purpose power switching applications where robustness and efficiency are critical.