GT10J312(Q)

Description：IGBT 600V 10A 60W TO220SM
Series：-

SKU:3b899abd71b9 Category: Single IGBTs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 10A 60W TO220SM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：10:00 AM
Current - Collector Pulsed (Icm)：20 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 10A
Power - Max：60 W
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：400ns/400ns
Test Condition：300V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr)：200 ns
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package：-
Grade：-
Qualification：-

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GT10J312(Q)

Overview

The GT10J312 is a third-generation silicon N-channel IGBT from Toshiba Semiconductor and Storage, designed for high-power switching and motor control applications. It features an enhancement mode structure with an integrated fast recovery diode (FRD) between the emitter and collector. The device supports a collector-emitter voltage of 600 V and a continuous DC collector current of 10 A at 25°C. Key electrical parameters include a maximum saturation voltage of 2.7 V and a maximum fall time of 0.30 μs under specified inductive load conditions.

Feature Summary

Third-generation IGBT technology providing enhanced performance characteristics
Integrated FRD functionality between emitter and collector terminals
High-speed switching capability with minimized fall time
Low saturation voltage design for improved efficiency

Applications

High power switching applications
Motor control systems

Procurement Notes

Verify component authenticity by checking the marking code '10J312' against official Toshiba documentation. Confirm package type availability, as the datasheet lists both JEDEC and JEITA variants with distinct weights. Ensure compliance with RoHS requirements through direct supplier confirmation prior to procurement.

Selection Notes

Evaluate thermal management requirements based on a junction-to-case thermal resistance of 2.08 °C/W for the IGBT and 3.76 °C/W for the diode. Design gate drive circuits to accommodate ±15 V swing and ensure peak forward current ratings are not exceeded during transient events. Verify operating temperature limits do not exceed 150°C junction temperature.

Part Context

This component belongs to Toshiba's insulated gate bipolar transistor lineup targeting industrial power electronics. It represents a specific generation of devices optimized for balancing switching speed and conduction losses. The product line includes variations such as the GT10J312(SM), indicating different packaging or marking standards within the same electrical specification family.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching 600V/10A specifications and TO-220-style packaging constraints.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.