GT20J341,S4X(S

$2.74

Description：IGBT 600V 20A TO-220SIS
Series：-

SKU:2f25f29874e6 Category: Single IGBTs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 20A TO-220SIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：80 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 20A
Power - Max：45 W
Switching Energy：500µJ (on), 400µJ (off)
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：60ns/240ns
Test Condition：300V, 20A, 33Ohm, 15V
Reverse Recovery Time (trr)：90 ns
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220SIS
Grade：-
Qualification：-

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GT20J341,S4X(S

Overview

The GT20J341 is a silicon N-channel IGBT from Toshiba Semiconductor and Storage, designed for motor driver applications. It features a TO-220SIS package with an integrated FRD between the emitter and collector. Key electrical parameters include a collector-emitter voltage of 600 V and a DC collector current rating of 20 A at Tc = 25°C. The typical saturation voltage is 1.5 V at IC = 20 A. Thermal characteristics specify a junction-to-case thermal resistance of 2.78 °C/W for the IGBT and 4.23 °C/W for the diode. The device supports a short-circuit withstand time of 5 µs and operates within a junction temperature range up to 150°C.

Feature Summary

Sixth generation technology architecture
Low saturation voltage performance
Integrated fast recovery diode

Applications

Motor Drivers

Procurement Notes

Verify component authenticity by checking markings against official datasheet specifications. Confirm RoHS compatibility status directly with Toshiba sales representatives as indicated in documentation. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and handling precautions before integration into designs.

Selection Notes

Evaluate thermal management requirements based on specified junction-to-case thermal resistance values. Ensure gate drive voltages remain within the ±25 V absolute maximum rating. Consider the 5 µs short-circuit withstand capability when designing protection circuits for high-power switching scenarios.

Part Context

This discrete IGBT belongs to Toshiba's sixth-generation product line aimed at improving efficiency in power conversion systems. The inclusion of a built-in FRD simplifies circuit design for inductive loads commonly found in motor control applications.

Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Cross-referencing with other models requires careful comparison of pinouts, voltage ratings, and thermal characteristics to ensure functional compatibility.