GT30J121(Q)

$3.60

Description：IGBT 600V 30A 170W TO3PN
Series：-

SKU:b01a8321ed3c Category: Single IGBTs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 30A 170W TO3PN
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 30A
Power - Max：170 W
Switching Energy：1mJ (on), 800µJ (off)
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：90ns/300ns
Test Condition：300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P(N)
Grade：-
Qualification：-

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GT30J121(Q)

Overview

The GT30J121(Q) is a silicon N-channel IGBT from Toshiba Semiconductor and Storage, designed for current resonance inverter switching applications. It features a breakdown voltage (V_CES) of 600 V and a collector current rating (I_C) of 30 A at 25°C. The device utilizes the 4th generation IGBT technology to optimize switching performance and conduction losses. Key electrical characteristics include a low saturation voltage and optimized gate charge parameters suitable for high-frequency operation in plasma display panels and similar power conversion systems.

Feature Summary

Optimized for current resonance inverter switching applications
Low saturation voltage for reduced conduction loss
High-speed switching capability with optimized gate charge

Applications

Plasma display panel inverters
Current resonance inverter circuits
General-purpose high-power switching supplies

Part Context

This component belongs to Toshiba's 4th Generation IGBT lineup, specifically engineered for resonant inverter topologies. It complements other models like the GT30J122 within the same series, offering comparable performance metrics tailored for efficient power conversion in consumer electronics and industrial power supplies.

Replacement Considerations

Direct substitutes may include the GT30J122 or GT30J124 from Toshiba, provided the application can accommodate their respective voltage ratings of 600V and 600V/200A. Verify pinout compatibility and thermal management requirements when cross-referencing with these related IGBT models.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.