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Product Detailed Parameters
- Description：IGBT 1350V 60A TO-247
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1350 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 60A
- Power - Max：348 W
- Switching Energy：-, 1.3mJ (off)
- Input Type：Standard
- Gate Charge：270 nC
- Td (on/off) @ 25°C：-
- Test Condition：300V, 60A, 39Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The GT30N135SRA,S1E is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage (VCEO) of 1.35 kV and a continuous collector current of 60 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.15 V and supports a power dissipation of 348 W. It operates within a temperature range of -55°C to +175°C, with a maximum gate-emitter voltage of ±25 V. The component utilizes through-hole mounting and is supplied in reel or cut tape packaging.
Feature Summary
- High voltage capability suitable for demanding power switching applications
- Robust thermal performance allowing operation up to 175°C junction temperature
- Single configuration designed for discrete circuit integration
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency inverters
Procurement Notes
Verify the specific ordering suffix S1E against the manufacturer's official datasheet to confirm package type and tape/reel specifications. Ensure the procurement channel provides valid RoHS compliance documentation as listed in the product attributes. Cross-reference the Mouser part number 757-GT30N135SRAS1E with the distributor's current inventory status to avoid discrepancies.
Selection Notes
Select this IGBT when a 1.35 kV blocking voltage and 60 A continuous current rating are required for high-power switching. Consider the 2.15 V saturation voltage for conduction loss calculations. Verify that the application circuit can support the 348 W power dissipation limit and that the PCB layout accommodates the through-hole package dimensions and thermal requirements.
Part Context
This component belongs to Toshiba's discrete IGBT transistor series, categorized under power semiconductors. It is distinct from digital transistors or MOSFETs offered by the same manufacturer. The part is specifically engineered for high-voltage, high-current applications requiring reliable switching performance in industrial environments.
Replacement Considerations
Consult Toshiba's official replacement guide or cross-reference tools for verified equivalent parts. Do not assume functional compatibility with other manufacturers' 1.35 kV IGBTs without verifying pinout, saturation voltage, and thermal characteristics against the original datasheet.
