GT40QR21(STA1,E,D

$4.51

Description：IGBT 1200V 40A TO-3P
Series：-

SKU:8c6db73544b6 Category: Single IGBTs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 40A TO-3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：80 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 40A
Power - Max：230 W
Switching Energy：-, 290µJ (off)
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：280V, 40A, 10Ohm, 20V
Reverse Recovery Time (trr)：600 ns
Operating Temperature：175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P(N)
Grade：-
Qualification：-

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GT40QR21(STA1,E,D

Overview

The GT40QR21 is a silicon N-channel IGBT from Toshiba Semiconductor and Storage, designed for voltage-resonant inverter switching applications. It features a monolithically integrated freewheeling diode (RC-IGBT) within the chip. The device supports a collector-emitter voltage of 1200 V and a continuous collector current of 40 A. Key electrical parameters include a typical saturation voltage of 1.9 V at 40 A and a maximum junction temperature of 175°C. Switching performance includes a fall time of 0.20 µs and a reverse recovery time of 0.60 µs. It is housed in a TO-3P(N) package with a thermal resistance of 0.65 °C/W.

Feature Summary

Monolithic integration of an RC-IGBT and a freewheeling diode on a single chip
High-speed switching capability with low saturation voltage characteristics
Enhanced mode operation supporting high junction temperatures up to 175°C

Applications

Voltage-resonant inverter switching applications

Procurement Notes

Verify component authenticity by checking markings against official datasheet specifications. Confirm RoHS compatibility status directly with Toshiba sales representatives as indicated in documentation. Ensure handling procedures account for electrostatic discharge sensitivity during installation and storage.

Selection Notes

Select this component specifically for voltage-resonant inverter designs where its integrated freewheeling diode functionality is required. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance and power dissipation limits under expected operating conditions.

Part Context

This discrete IGBT belongs to Toshiba's 6.5th generation product line. It utilizes RC-IGBT technology to optimize switching speed and conduction losses. The device was commercially produced starting in December 2010.