GT50JR22(STA1,E,S)

$5.56

Description：IGBT 600V 50A TO-3P
Series：-

SKU:681e8e93a2ad Category: Single IGBTs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 50A TO-3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：100 A
Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 50A
Power - Max：230 W
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P(N)
Grade：-
Qualification：-

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GT50JR22(STA1,E,S)

Overview

The GT50JR22(STA1,E,S) is a Silicon N-Channel IGBT from Toshiba Semiconductor and Storage, belonging to the 6.5th generation series. It features an integrated Freewheeling Diode (FWD) within the chip. The device supports a collector-emitter voltage of 600 V and a continuous collector current of 50 A at 25°C. It operates with a maximum junction temperature of 175°C and offers a typical saturation voltage of 1.55 V at 50 A. Switching performance includes a fall time of 0.05 µs for the IGBT and a reverse recovery time of 0.35 µs for the FWD. The component is housed in a TO-3P(N) package.

Feature Summary

Monolithically integrates a Freewheeling Diode (FWD) with the IGBT chip
Designed specifically for current-resonant inverter switching applications
Supports high-speed switching operations with low saturation voltage

Applications

Current-Resonant Inverter Switching Applications

Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as environmental compliance details are not explicitly confirmed in the provided documentation. Ensure that the ordering suffix matches the exact part number required for your design specifications. Confirm mounting torque requirements and thermal management strategies before procurement to maintain reliability under heavy loads.

Selection Notes

Select this component for designs requiring high-speed switching and low conduction losses in resonant inverter circuits. Consider the 175°C maximum junction temperature capability for high-temperature environments. Evaluate the thermal resistance and ensure adequate heat sinking, as power dissipation increases significantly at higher temperatures due to positive temperature coefficients.

Part Context

This discrete IGBT belongs to Toshiba's 6.5th generation product line. It is designed as a standalone switching element rather than a module. The integration of the FWD simplifies circuit design by reducing external component count. Commercial production began in March 2012.