GT880P15K

$1.50

Description：MOSFET P-CH 150V -30A 138W TO-25
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT),-

SKU:7af9943f8f3a Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

GT880P15K is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET P-CH 150V -30A 138W TO-25. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GT880P15K

Description：MOSFET P-CH 150V -30A 138W TO-25
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT),-
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：100mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3350 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：138W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for GT880P15K

GT880P15K

Single FETs, MOSFETs Overview

The GT880P15K is a P-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a -150V drain-source voltage rating and supports continuous drain currents of -30A at 25°C case temperature. Key electrical parameters include an on-resistance of less than 100mΩ at VGS=-10V and less than 120mΩ at VGS=-4.5V. It is housed in a TO-252 package with a junction-to-case thermal resistance of 0.9°C/W.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for low gate charge and high performance
High power density capability within the TO-252 footprint
Simplified gate driving technique reduces overall system cost

Single FETs, MOSFETs Applications

Power switch applications
DC/DC converters
Battery management systems (BMS)

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'K' against official manufacturer documentation to confirm packaging details, as datasheets may list standard reel quantities without explicitly defining the suffix's impact on function or shipping configuration. Ensure compliance requirements match project specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a P-channel solution with robust avalanche testing and simplified drive requirements. Evaluate the thermal resistance and safe operating area curves to ensure adequate heat dissipation for the intended load current and ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Goford Semiconductor power MOSFET portfolio, designed for automotive, industrial, and consumer use cases. The series emphasizes compact size and high thermal efficiency, allowing single devices to replace multiple parallel traditional components to simplify circuit design.

Single FETs, MOSFETs Replacement Considerations

Cross-reference pinouts and absolute maximum ratings when substituting. Verify that alternative P-channel MOSFETs meet the -150V breakdown and -30A current requirements.