GTRA263902FC-V2-R0

GTRA263902FC-V2-R0

$146.63
  • Description:RF MOSFET HEMT 48V H-37248C-4
  • Series:GaN

SKU:55bb576f0661 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 48V H-37248C-4
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:HEMT
  • Frequency:2.495GHz ~ 2.69GHz
  • Gain:13.8dB
  • Voltage - Test:48 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:280 mA
  • Power - Output:370W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-37248C-4
  • Supplier Device Package:H-37248C-4
  • Configuration:-

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GTRA263902FC-V2-R0

Overview

The GTRA263902FC-V2-R0 is a high-power RF amplifier utilizing Gallium Nitride on Silicon Carbide (GaN-on-SiC) HEMT technology. It operates within the frequency range of 2495 MHz to 2690 MHz and delivers an output power of 370 Watts at a supply voltage of 48 Volts. The device provides a gain of 13.8 dB and is housed in the H-37248C-4 package, which features a thermally enhanced design with an earless flange to facilitate efficient heat dissipation.

Feature Summary

  • Utilizes GaN-on-SiC HEMT technology for high power density and efficiency
  • Features a thermally enhanced earless flange package for improved heat management
  • Includes integrated input matching for simplified circuit integration

Applications

  • SATCOM ground terminals
  • Point-to-point microwave links
  • Electronic warfare systems

Procurement Notes

Verify the specific suffix (e.g., -R0) against the manufacturer's current datasheet to ensure correct packaging and revision status. Confirm that the H-37248C-4 package dimensions align with your PCB footprint requirements. Check for any recent Product Change Notifications (PCNs) that may affect material composition or manufacturing location. Ensure thermal interface materials are compatible with the earless flange design.

Selection Notes

Select this component when high output power is required in the 2.5 GHz band. The GaN-on-SiC construction offers superior performance compared to traditional LDMOS technologies. Consider the thermal resistance of the earless flange package for heatsink design. Verify that the 48V supply voltage matches your system architecture. Evaluate the 13.8 dB gain to determine if additional amplification stages are necessary.

Part Context

This part belongs to MACOM's portfolio of high-power RF amplifiers designed for demanding communication and defense applications. It represents a generation of devices leveraging advanced semiconductor materials to achieve higher efficiency and power density. The product line focuses on providing robust solutions for base station and point-to-point link infrastructure where reliability and thermal performance are critical.

Replacement Considerations

No public confirmed substitute part numbers are available.

GTRA263902FC-V2-R0GTRA263902FC-V2-R0
$146.63
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