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Product Detailed Parameters
- Description：RF MOSFET HEMT 48V H-37248C-4
- Series：GaN
- Mfr：MACOM Technology Solutions
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：HEMT
- Frequency：3.4GHz ~ 3.6GHz
- Gain：13.5dB
- Voltage - Test：48 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：140 mA
- Power - Output：200W
- Voltage - Rated：125 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：H-37248C-4
- Supplier Device Package：H-37248C-4
- Configuration：-
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Overview
The GTRA362002FC is a thermally-enhanced high power RF GaN on SiC HEMT designed for multi-standard cellular power amplifier applications. It operates in the 3400–3600 MHz frequency range with a 48 V supply and delivers 200 W output power at P3dB. The device features an asymmetrical Doherty design with input matching, achieving 60% efficiency and 12.5 dB gain under typical pulsed CW conditions. It utilizes the H-37248C-4 package.
Feature Summary
- Asymmetrical Doherty architecture supporting main and peak devices
- Input matched configuration simplifying circuit integration
- Thermally enhanced earless flange package design
Applications
- Multi-standard cellular power amplifiers
- WCDMA base station transmitters
- Broadband RF power amplification
Procurement Notes
Verify the manufacturer designation as Wolfspeed, not MACOM, when sourcing this component. Confirm the specific ordering suffix (e.g., -V1-R0) to ensure correct tape and reel packaging quantities of 50 pieces. Validate RoHS compliance status directly against the current datasheet revision before procurement.
Selection Notes
Select this component for applications requiring high linearity and efficiency in the 3.4 to 3.6 GHz band. Ensure the design accommodates the 48 V operating voltage and manages thermal resistance effectively using the specified earless flange mounting method. Verify that the load pull impedance requirements match the system's matching network design.
Part Context
This component belongs to the family of high electron mobility transistors utilizing Gallium Nitride on Silicon Carbide technology. It is engineered specifically for demanding RF power amplification tasks where high output power and thermal stability are critical requirements for modern wireless communication infrastructure.
Replacement Considerations
Consult official documentation for confirmed substitute part numbers. Do not assume direct pin-to-pin compatibility with other models without verifying electrical parameters and package dimensions.
