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The GTVA126001EC-V1-R0 is a thermally-enhanced high power RF GaN HEMT manufactured by Wolfspeed. It operates in the DC to 1.4 GHz frequency band with a 50 V drain bias. The device delivers 600 W output power at P3dB, achieving 65% drain efficiency and 18 dB gain under pulsed conditions (1200 MHz, 300 µs pulse width, 10% duty cycle). It features input matching and can withstand a 10:1 load mismatch at peak power. The component utilizes GaN-on-SiC technology and is housed in an H-36248-2 single-ended bolt-down flange package.
Verify the manufacturer origin carefully, as official documentation identifies this part as a Wolfspeed product despite potential listings under other brand names. Confirm the specific ordering suffix matches the required shipping quantity and package variant. Ensure handling precautions are followed due to ESD sensitivity. Validate that the thermal management solution meets the specified junction temperature requirements for reliable operation.
Select this component when high output power and broad bandwidth are required within the DC to 1.4 GHz range. The input matching feature reduces external component count. Consider the thermal resistance specifications for heatsink design. Verify compatibility with the recommended operating voltage and gate quiescent conditions to ensure optimal performance and longevity.
This device belongs to the GTVA series of high electron mobility transistors designed for demanding RF applications. It represents a thermally enhanced variant optimized for robust performance in high-power environments. The H-36248-2 package provides a standardized form factor for mounting and thermal interface integration in commercial and military hardware.
GTVA126001FC-V1-R0 is a direct functional substitute using the H-37248-2 earless flange package. Verify mechanical fit and pinout compatibility before substitution. Performance characteristics remain consistent between the EC and FC variants.