GTVA126001EC-V1-R0

GTVA126001EC-V1-R0

$749.77
  • Description:RF MOSFET HEMT 50V H-36248-2
  • Series:GaN

SKU:e25aa06b8e3b Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 50V H-36248-2
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:HEMT
  • Frequency:1.2GHz ~ 1.4GHz
  • Gain:20dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:600W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:H-36248-2
  • Supplier Device Package:H-36248-2
  • Configuration:-

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GTVA126001EC-V1-R0

Overview

The GTVA126001EC-V1-R0 is a thermally-enhanced high power RF GaN HEMT manufactured by Wolfspeed. It operates in the DC to 1.4 GHz frequency band with a 50 V drain bias. The device delivers 600 W output power at P3dB, achieving 65% drain efficiency and 18 dB gain under pulsed conditions (1200 MHz, 300 µs pulse width, 10% duty cycle). It features input matching and can withstand a 10:1 load mismatch at peak power. The component utilizes GaN-on-SiC technology and is housed in an H-36248-2 single-ended bolt-down flange package.

Feature Summary

  • GaN on SiC HEMT technology for high power density
  • Input matched design simplifying circuit integration
  • Thermally enhanced package for improved heat dissipation
  • Capable of withstanding severe load mismatches

Applications

  • High power RF amplification
  • Military radar systems
  • Electronic warfare applications
  • Broadband communication infrastructure

Procurement Notes

Verify the manufacturer origin carefully, as official documentation identifies this part as a Wolfspeed product despite potential listings under other brand names. Confirm the specific ordering suffix matches the required shipping quantity and package variant. Ensure handling precautions are followed due to ESD sensitivity. Validate that the thermal management solution meets the specified junction temperature requirements for reliable operation.

Selection Notes

Select this component when high output power and broad bandwidth are required within the DC to 1.4 GHz range. The input matching feature reduces external component count. Consider the thermal resistance specifications for heatsink design. Verify compatibility with the recommended operating voltage and gate quiescent conditions to ensure optimal performance and longevity.

Part Context

This device belongs to the GTVA series of high electron mobility transistors designed for demanding RF applications. It represents a thermally enhanced variant optimized for robust performance in high-power environments. The H-36248-2 package provides a standardized form factor for mounting and thermal interface integration in commercial and military hardware.

Replacement Considerations

GTVA126001FC-V1-R0 is a direct functional substitute using the H-37248-2 earless flange package. Verify mechanical fit and pinout compatibility before substitution. Performance characteristics remain consistent between the EC and FC variants.

GTVA126001EC-V1-R0GTVA126001EC-V1-R0
$749.77
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