GTVA263202FC-V1-R0

Overview

The GTVA263202FC-V1-R0 is a Gallium Nitride on Silicon Carbide High Electron Mobility Transistor (HEMT) manufactured by MACOM Technology Solutions. Designed for high-power radio frequency applications, this device operates at a center frequency of 2690 MHz with a drain voltage of 48 V. It utilizes an H-37248-4 package and is supplied in tape and reel format. The component delivers an output power of 340 W at the P3dB compression point under typical pulsed continuous wave conditions with combined outputs.

Feature Summary

• Utilizes GaN on SiC HEMT technology for high performance
• Features input matching for simplified circuit integration
• Engineered for high output power in RF amplification

Applications

• Multi-standard cellular power amplifier systems
• Broadband RF power amplification
• Defense and tactical communication transmitters

Procurement Notes

Verify the specific suffix R0 against the official MACOM datasheet to confirm packaging and reel specifications. Ensure compatibility with thermal management requirements for 48 V operation. Cross-reference the H-37248-4 package dimensions with PCB layout constraints before finalizing procurement orders.

Selection Notes

Select this component when designing amplifiers requiring 340 W output power at 2690 MHz. Consider the 48 V bias requirement and the need for input matching networks. Evaluate thermal dissipation capabilities inherent to the GaN on SiC substrate for high-duty cycle pulsed applications.

Part Context

This part belongs to MACOM's portfolio of GaN on SiC HEMTs designed for demanding RF environments. It complements other high-power devices like the GTRB184402FC, targeting similar cellular and defense sectors. The series emphasizes high efficiency and linearity for modern multi-standard wireless infrastructure.

Replacement Considerations

Direct substitutes are not explicitly listed in available public documentation. Engineers should evaluate other MACOM GaN HEMTs with comparable 48 V ratings and 2690 MHz operation, ensuring pinout and thermal characteristics align with existing designs.