GWA75H65DRFB2AG

$2.69

Description：IGBT
Series：ECOPACK®

SKU:800d5e8dc63e Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT
Series：ECOPACK®
Mfr：STMicroelectronics
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：123 A
Current - Collector Pulsed (Icm)：240 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 75A
Power - Max：395 W
Switching Energy：-
Input Type：Standard
Gate Charge：253 nC
Td (on/off) @ 25°C：-
Test Condition：400V, 75A, 2.2Ohm, 15V
Reverse Recovery Time (trr)：710 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 Long Leads
Grade：Automotive
Qualification：AEC-Q101

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GWA75H65DRFB2AG

Overview

The STMicroelectronics GWA75H65DRFB2AG is an automotive-grade N-channel IGBT from the HB2 series, featuring a trench gate field-stop structure. It operates with a collector-emitter voltage of 650 V and a continuous collector current of 75 A at TC = 100 °C (123 A at TC = 25 °C). The device includes a co-packed high ruggedness rectifier diode. Key electrical parameters include a typical VCE(sat) of 1.6 V at IC = 75 A, a maximum junction temperature of 175 °C, and a thermal resistance RthJC of 0.38 °C/W for both the IGBT and diode.

Feature Summary

AEC-Q101 qualified for heavy-duty automotive applications
Co-packed with a high ruggedness rectifier diode
Optimized conduction and switching energies for hard switching
Minimized tail current and tight parameter distribution

Applications

DC/DC converter for EV/HEV
On board charger (OBC)

Procurement Notes

Verify component authenticity by checking the marking code 'G75H65DRFB2AG' against the datasheet. Confirm the package type is TO-247 long leads and that the part meets AEC-Q101 automotive standards. Ensure the ordering suffix matches the specific requirements for your design before finalizing procurement.

Selection Notes

Select this component for high-reliability automotive power electronics requiring optimized hard-switching performance. The positive VCE(sat) temperature coefficient facilitates safer paralleling operation. Consider the 175 °C maximum junction temperature and low thermal resistance when designing the thermal management system for DC/DC converters or on-board chargers.

Part Context

This IGBT belongs to the HB2 series, representing an evolution of ST's proprietary trench gate field-stop technology. It is designed specifically for high-speed applications in the automotive sector. The integration of a rugged anti-parallel diode makes it suitable for compact, high-efficiency power modules where space and reliability are critical constraints.