GWM120-0075P3-SL

Description：MOSFET 6N-CH 75V 118A ISOPLUS
Series：-

SKU:3414c89c78ca Category: FET, MOSFET Arrays Brand: IXYS

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Product introduction

GWM120-0075P3-SL is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET 6N-CH 75V 118A ISOPLUS. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for GWM120-0075P3-SL

Description：MOSFET 6N-CH 75V 118A ISOPLUS
Series：-
Mfr：IXYS
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：6 N-Channel (3-Phase Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：75V
Current - Continuous Drain (Id) @ 25°C：118A
Rds On (Max) @ Id, Vgs：5.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：17-SMD, Flat Leads
Supplier Device Package：ISOPLUS-DIL™
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for GWM120-0075P3-SL

GWM120-0075P3-SL

FET, MOSFET Arrays Overview

The GWM120-0075P3-SL is a three-phase full bridge module utilizing Trench MOSFET technology. It features VDSS of 75 V, ID25 of 118 A, and typ. RDSon of 3.7 mΩ at TVJ = 25°C. The package includes auxiliary terminals for control and supports soldering or welding connections.

FET, MOSFET Arrays Feature Summary

Trench MOSFET technology providing low on-state resistance
Optimized intrinsic reverse diode characteristics
High current capability up to 300 A with isolated DCB ceramic base plate

FET, MOSFET Arrays Applications

AC drives
Electric power steering in automobiles
Propulsion drives in industrial vehicles
Starter generators
Forklift drives

FET, MOSFET Arrays Procurement Notes

Verify the specific lead form configuration required for your assembly process. The datasheet lists straight leads (SL), bent leads (BL), and surface mount device (SMD) options. Confirm that the ordering code matches the physical terminal style needed for your PCB layout or chassis mounting requirements.

FET, MOSFET Arrays Selection Notes

Select this component for high-current applications requiring integrated three-phase bridge functionality. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values. Verify gate drive voltage compatibility with the 10 V operating level and check insulation requirements against the 1000 V~ isolation rating.

FET, MOSFET Arrays Part Context

This part belongs to the GWM series of IXYS power modules designed for high-power density applications. It integrates six N-channel enhancement mode MOSFETs into a single compact unit. The module utilizes an isolated DCB ceramic substrate to provide electrical isolation between the power terminals and the mounting base.