ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
GWM160-0055X1-SL is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET 6N-CH 55V 150A ISOPLUS. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for GWM160-0055X1-SL
- Description：MOSFET 6N-CH 55V 150A ISOPLUS
- Series：-
- Mfr：IXYS
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：6 N-Channel (3-Phase Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：55V
- Current - Continuous Drain (Id) @ 25°C：150A
- Rds On (Max) @ Id, Vgs：3.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：105nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：17-SMD, Flat Leads
- Supplier Device Package：ISOPLUS-DIL™
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for GWM160-0055X1-SL
FET, MOSFET Arrays Overview
The GWM160-0055X1-SL is a six N-channel MOSFET array configured as a three-phase bridge. It utilizes trench technology to achieve low on-resistance and an optimized intrinsic reverse diode. The device features a Drain-to-Source voltage of 55V and supports a continuous current of 150A. It is housed in an ISOPLUS-DIL surface mount package, providing high integration for power applications.
FET, MOSFET Arrays Feature Summary
- Six N-channel MOSFETs arranged in a three-phase bridge configuration
- Trench technology implementation for low RDSon performance
- Optimized intrinsic reverse diode characteristics
- ISOPLUS-DIL surface mount package design
FET, MOSFET Arrays Applications
- Three-phase motor drives
- DC to AC inverters
- High current power conversion systems
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix designation against official IXYS documentation to confirm exact electrical tolerances and thermal specifications. Confirm component availability status as distribution channels may list obsolete or discontinued inventory. Ensure the received part matches the ISOPLUS-DIL package dimensions and pinout requirements for the intended PCB layout.
FET, MOSFET Arrays Selection Notes
Select this component when a compact, integrated three-phase bridge solution is required for 55V applications. Consider the 150A current rating and thermal management needs associated with the ISOPLUS-DIL package. Evaluate the trench technology benefits for efficiency requirements compared to standard planar devices.
FET, MOSFET Arrays Part Context
This module belongs to the IXYS GWM series of power MOSFET arrays. It integrates multiple transistors into a single package to reduce board space and interconnection complexity. The series focuses on high-current density applications using advanced packaging technologies.
FET, MOSFET Arrays Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Consult official IXYS cross-reference guides for compatible alternatives.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
