GWM160-0055X1-SMDSAM

FET, MOSFET Arrays Overview

The GWM160-0055X1-SMDSAM is a three-phase full bridge module utilizing IXYS trench MOSFET technology. It integrates six N-channel devices within an ISOPLUS-DIL package, designed for high-current applications. Key electrical parameters include a drain-source voltage (VDSS) of 55V and a continuous drain current (ID25) of 150A. The typical on-resistance (RDSon) is specified at 2.7 milliohms. This component offers a high level of integration suitable for power conversion systems requiring robust switching performance.

FET, MOSFET Arrays Feature Summary

• Integrates six N-channel trench MOSFETs into a single three-phase full bridge configuration
• Features optimized intrinsic reverse diode characteristics for efficient switching
• Utilizes DCB isolated construction for high thermal management in high current scenarios

FET, MOSFET Arrays Applications

• Three-phase motor drives
• DC to AC inverters
• High-power industrial power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'SAM' against the manufacturer's official documentation to confirm exact packaging and handling specifications. Ensure compatibility with existing PCB footprints and thermal interface materials. Cross-reference the datasheet revision date to confirm parameter stability. Confirm RoHS compliance status directly with the supplier as historical data may vary.

FET, MOSFET Arrays Selection Notes

Select this module when a compact, integrated solution for three-phase rectification or inversion is required. The low RDSon value supports high efficiency in high-current environments. Consider the 55V rating to ensure it aligns with the system's bus voltage requirements. Evaluate the thermal resistance capabilities against the expected heat dissipation loads.

FET, MOSFET Arrays Part Context

This part belongs to the GWM series of MOSFET modules from IXYS. It represents a specialized power semiconductor device combining multiple transistors for complex power stages. The series is known for balancing high current capacity with low conduction losses, targeting demanding industrial and automotive power electronics applications.

FET, MOSFET Arrays Replacement Considerations

Consult the official IXYS replacement guide for direct equivalents. Verify pinout compatibility and thermal characteristics before substitution. Generic replacements may not match the specific trench technology or diode optimization of the original design.