HAS310M17BM3

FET, MOSFET Arrays Overview

The HAS310M17BM3 is a silicon carbide half-bridge module rated for 1700 V and 310 A. It features a drain-source breakdown voltage of 1700 V, a continuous drain current of 409 A at 25 °C case temperature, and an on-state resistance of 5.8 mΩ at 150 °C. The module utilizes a standard 62 mm footprint with screw mounting and operates within a virtual junction temperature range of -40 °C to 150 °C continuously. Key electrical parameters include a gate-source voltage limit of +23 V transient and a recommended operating voltage of +15 V.

FET, MOSFET Arrays Feature Summary

• Industry standard 62 mm footprint enabling system retrofit
• Low inductance design optimized for high-frequency SiC operation
• Compliant with EN45545-2 R22/23 HL3 railway standards
• High humidity operation capability verified by THB-80 testing

FET, MOSFET Arrays Applications

• Railway auxiliary and traction systems
• EV fast charging infrastructure
• Industrial motor drives
• Induction heating equipment
• Uninterruptible power supplies (UPS)

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix when purchasing. The HAS310M17BM3 designation indicates the module without pre-applied phase change thermal interface material. Confirm that the required thermal management solution is sourced separately or select the variant with integrated TIM if preferred. Ensure compatibility with existing cooling plates and mounting hardware specifications.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high voltage blocking and low switching losses in a compact form factor. Evaluate the thermal resistance characteristics against the expected case temperatures to ensure the junction temperature remains within safe operating limits. Consider the stray inductance values when designing the DC bus layout to minimize voltage overshoot during switching transitions.

FET, MOSFET Arrays Part Context

This module belongs to the BM3 family of silicon carbide power modules from Wolfspeed. It shares the physical dimensions and pinout configuration with other devices in the series, facilitating direct replacement or parallel usage in multi-module designs. The platform supports both 1200 V and 1700 V ratings across different current capabilities.

FET, MOSFET Arrays Replacement Considerations

Direct replacements within the same manufacturer's portfolio include CAS310M17BM3. Verify mechanical fit and electrical parameter alignment before substitution. Cross-manufacturer replacements require thorough validation of pinouts, thermal characteristics, and switching behavior.