HAS350M12BM3

FET, MOSFET Arrays Overview

The HAS350M12BM3 is a 1200 V, 350 A Silicon Carbide half-bridge power module from Wolfspeed. It features an industry-standard 62 mm footprint and utilizes SiC MOSFETs with Schottky diodes. Key electrical parameters include a drain-source voltage of 1200 V, continuous drain current of 424 A at 25°C case temperature, and typical on-state resistance of 5.2 mΩ at 25°C. The module supports a maximum junction temperature of 175°C for intermittent operation and 150°C for continuous use. Stray inductance is specified at 11.1 nH.

FET, MOSFET Arrays Feature Summary

• Compliant with EN45545-2 R22/23 HL3 standards for railway applications
• Low inductance design optimized for high-frequency silicon carbide switching
• High humidity operation capability verified through THB-80 testing
• Normally-off fail-safe device operation ensuring zero reverse recovery

FET, MOSFET Arrays Applications

• Railway auxiliary and traction systems
• EV fast charging infrastructure
• Induction heating equipment
• Motor drives and renewable energy inverters
• Uninterruptible power supplies (UPS) and switch-mode power supplies (SMPS)

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix when purchasing. The HAS350M12BM3 designation indicates the module without pre-applied phase change thermal interface material. The HAS350M12BM3T variant includes this material. Confirm that the selected version matches the thermal management strategy defined in the system design to ensure proper heat dissipation and compliance with manufacturer guidelines.

FET, MOSFET Arrays Selection Notes

Select this component based on its 62 mm form factor which enables direct retrofitting into existing silicon-based designs. Evaluate the thermal requirements against the specified junction-to-case thermal resistance and power dissipation limits. Ensure the gate driver circuitry supports the recommended -4 V to +15 V operating range and accounts for the internal gate resistance to manage switching speeds and electromagnetic interference effectively.

FET, MOSFET Arrays Part Context

This module belongs to the BM3 generation of Wolfspeed's silicon carbide power modules. It shares the standard 62 mm package dimensions with other modules in the series, facilitating modular system scalability. The BM3 platform focuses on maximizing power density while minimizing loop inductance, making it suitable for demanding industrial and transportation applications requiring robust performance under extreme conditions.

FET, MOSFET Arrays Replacement Considerations

Direct replacements within the same family include the HAS350M12BM3T, which differs only by the inclusion of pre-applied thermal interface material. Other BM3 half-bridge modules with different current ratings may be considered if system power requirements allow, provided the 62 mm footprint compatibility is maintained.

FET, MOSFET Arrays FAQ

What is the maximum allowable gate-source voltage?

The maximum transient gate-source voltage is +23 V and -10 V. The recommended static operating voltage is +15 V.

Does this module exhibit reverse recovery charge?

No, the integrated Schottky diodes do not have reverse recovery charge or tail current, resulting in zero reverse recovery energy during switching transitions.

What is the comparative tracking index rating?

The housing has a Comparative Tracking Index (CTI) of 600, placing it in Material Group I, which ensures high reliability in humid environments.