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HAS530M12BM3 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Wolfspeed, Inc.. Its product description is MOSFET 2N-CH 1200V 530A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for HAS530M12BM3
- Description：MOSFET 2N-CH 1200V 530A
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Bulk
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：530A
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for HAS530M12BM3
FET, MOSFET Arrays Overview
The Wolfspeed HAS530M12BM3 is a Silicon Carbide half-bridge module rated for 1200 V and 530 A. It features a recommended gate-source voltage of -4 V to +15 V and a maximum transient rating of -10 V to +23 V. The typical drain-source on-state resistance is 2.7 mΩ at 25 °C, rising to 4.8 mΩ at 175 °C. Continuous drain current reaches 645 A at 25 °C case temperature. The module operates within a junction temperature range of -40 °C to 150 °C, with intermittent capability up to 175 °C. Stray inductance is specified at 11.1 nH.
FET, MOSFET Arrays Feature Summary
- Industry standard 62 mm footprint designed for system retrofitting
- Low inductance architecture optimized for high-frequency SiC operation
- Compliant with EN45545-2 R22/23 HL3 railway standards
- High humidity operational capability verified through THB-80 testing
FET, MOSFET Arrays Applications
- Railway auxiliary and traction systems
- Induction heating equipment
- Motor drives
- Renewables energy converters
- EV fast charging stations
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix when purchasing. The HAS530M12BM3 designation indicates the module without pre-applied phase change thermal interface material. The HAS530M12BM3T variant includes this material. Confirm the exact requirement for your assembly process before placing orders to ensure compatibility with your thermal management design.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring low switching losses and high power density. Ensure the external gate resistor selection aligns with the dv/dt and di/dt requirements to manage electromagnetic interference. Verify that the cooling solution maintains the case temperature within the derating curves provided in the datasheet to sustain the rated continuous current.
FET, MOSFET Arrays Part Context
This module belongs to the BM3 generation of Wolfspeed power modules. It utilizes a copper baseplate and aluminum nitride insulator for thermal performance. The housing provides a comparative tracking index of 600, supporting use in demanding environments. It is part of a broader portfolio including compatible evaluation boards and gate driver tools.
FET, MOSFET Arrays Replacement Considerations
Direct replacements must match the 62 mm form factor and electrical ratings. Consider the HAS530M12BM3T if pre-applied thermal interface material is required. Cross-compatibility with other manufacturers' modules requires verification of pinout, mounting torque, and thermal resistance specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
