FET, MOSFET Arrays HAT1038RJ-EL-E product image

HAT1038RJ-EL-E

$1.37
  • Description:PCH POWER MOSFET -60V -3.5A 150M
  • Series:-

SKU:9e52e50fcb68 Category: Brand:

  
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HAT1038RJ-EL-E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is PCH POWER MOSFET -60V -3.5A 150M. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for HAT1038RJ-EL-E

  • Description:PCH POWER MOSFET -60V -3.5A 150M
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
  • Rds On (Max) @ Id, Vgs:150mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:600pF @ 10V
  • Power - Max:3W (Ta)
  • Operating Temperature:150°C
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for HAT1038RJ-EL-E

HAT1038RJ-EL-E

FET, MOSFET Arrays Overview

The HAT1038RJ-EL-E is a dual-channel P-channel silicon power MOSFET manufactured by Renesas Electronics Corporation. It features an 8-pin SOT package (R-PDSO-G8) and supports a maximum drain-source voltage of 60 V with a continuous current rating of 3.5 A. The device exhibits a typical on-resistance of 0.23 ohms. It is designed for general-purpose power switching applications and complies with RoHS standards, ensuring it is lead-free.

FET, MOSFET Arrays Feature Summary

  • Dual-channel configuration for integrated power management
  • P-channel silicon construction for standard switching operations
  • Compact surface-mount packaging suitable for space-constrained designs

FET, MOSFET Arrays Applications

  • General-purpose power switching circuits
  • Low-voltage DC-DC converter stages
  • Battery protection modules

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet version and revision history directly from Renesas Electronics to ensure parameter accuracy. Confirm that the R-PDSO-G8 package dimensions match the target PCB footprint requirements. Check for any recent lifecycle status updates or alternative sourcing recommendations from authorized distributors before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel MOSFET solution is required for low-voltage applications up to 60 V. Ensure the thermal management design accounts for the 0.23 ohm on-resistance at the expected load current. Verify that the 3.5 A current rating meets the peak and continuous load demands of the specific circuit topology.

FET, MOSFET Arrays Part Context

This part belongs to Renesas' discrete power MOSFET portfolio, focusing on small-signal power switching. It complements other single-channel devices by offering dual functionality in a compact form factor, reducing board space and assembly complexity for multi-rail or redundant power systems.

FET, MOSFET Arrays Replacement Considerations

Consult official Renesas documentation for qualified alternate part numbers within the same family. Verify pin compatibility and electrical parameters before substituting with components from other manufacturers.

HAT1038RJ-EL-EHAT1038RJ-EL-E
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