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HAT1126RWS-E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for HAT1126RWS-E
- Description：MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for HAT1126RWS-E
FET, MOSFET Arrays Overview
The HAT1126RWS-E is a silicon P-channel power MOSFET from Renesas Electronics, packaged in an SOP-8 (FP-8DA) format. It features dual internal MOS structures with pins 1 and 3 as sources, pins 2 and 4 as gates, and pins 5 through 8 connected to the drain. The device supports a drain-source voltage of -60 V and a continuous drain current of -6.0 A at 25°C. It operates with gate drive voltages of -4.5 V or -10 V, exhibiting static on-resistance values between 60 mΩ and 85 mΩ at -4.5 V, and 40 mΩ to 50 mΩ at -10 V. The component includes avalanche energy ratings up to 3.08 mJ for specific variants.
FET, MOSFET Arrays Feature Summary
- Dual internal MOS structure designed for high-density mounting applications
- Capable of operation with low 4.5 V gate drive signals
- Features low on-resistance for efficient power switching
- Includes avalanche rating capability for robust performance
FET, MOSFET Arrays Applications
- High-speed power switching circuits
- Automotive electronic systems
- Industrial motor control interfaces
FET, MOSFET Arrays Procurement Notes
Verify the exact suffix configuration against the official datasheet before ordering, as variations exist for automotive grades. Confirm production status directly with Renesas sales offices, as manufacturing may be terminated for certain product grades. Ensure compliance with export control laws if applicable. Request the latest quality grade classification to match application requirements.
FET, MOSFET Arrays Selection Notes
Select the appropriate variant based on required avalanche energy handling and temperature stability. The standard version lacks avalanche ratings, while the 'J' variant supports specific automotive conditions. Evaluate thermal dissipation capabilities using the provided derating curves for your specific PCB layout. Ensure gate drive voltage aligns with the desired on-resistance performance level.
FET, MOSFET Arrays Part Context
This component belongs to the HAT1126R series of silicon P-channel power MOSFETs manufactured by Renesas Electronics. The series utilizes a superscalar architecture concept adapted for power devices, integrating two MOS units within a single package to reduce resistance and improve switching speed. The SOP-8 package provides a compact footprint suitable for surface-mount assembly.
FET, MOSFET Arrays Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. Engineers should evaluate other Renesas P-channel MOSFETs with matching -60V ratings and similar RDS(on) characteristics. Verify pin compatibility and thermal performance before implementing any alternative components.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
