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HAT2038RJ-EL-E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is NCH POWER MOSFET 60V 5A 58MOHM S. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for HAT2038RJ-EL-E
- Description：NCH POWER MOSFET 60V 5A 58MOHM S
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Rds On (Max) @ Id, Vgs：58mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：520pF @ 10V
- Power - Max：3W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for HAT2038RJ-EL-E
FET, MOSFET Arrays Overview
The HAT2038RJ-EL-E is a dual-channel P-channel silicon power MOSFET manufactured by Renesas Electronics. It supports a continuous drain current of 3.5 A and withstands a drain-source voltage of 60 V. The device features a low on-resistance of 0.23 ohms, facilitating efficient power switching with minimal conduction losses. Packaged in an 8-pin Small Outline (SOT) format designated as R-PDSO-G8, this component is designed for compact circuit layouts. It is lead-free and RoHS compliant, ensuring adherence to environmental standards for electronic assemblies.
FET, MOSFET Arrays Feature Summary
- Dual-channel configuration for integrated power management
- Low on-resistance for high-efficiency switching applications
- Compact surface-mount packaging suitable for space-constrained designs
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- Power supply load switches
- Motor control systems
FET, MOSFET Arrays Procurement Notes
Verify the specific part number against official Renesas documentation to confirm availability and exact specifications. Ensure that the procurement channel provides genuine components with traceable manufacturing records. Check for any specific handling requirements related to electrostatic discharge during storage and installation.
FET, MOSFET Arrays Selection Notes
Select this component when a dual P-channel MOSFET solution is required for 60 V applications. Consider the 0.23 ohm on-resistance for thermal management calculations. Verify that the SOT package dimensions fit the target PCB layout constraints compared to alternative packages.
FET, MOSFET Arrays Part Context
This component belongs to Renesas' discrete power MOSFET portfolio, focusing on small-signal power switching. It complements other N-channel and P-channel devices in the lineup, offering a paired solution for half-bridge or synchronous rectification topologies where space efficiency is critical.
FET, MOSFET Arrays Replacement Considerations
Consult official Renesas cross-reference guides for verified substitutes. Ensure any replacement matches the 60 V rating, 3.5 A current capacity, and 0.23 ohm resistance while maintaining pin compatibility.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
