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HAT3015R-EL-E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is NCH/PCH POWER MOSFET 200V 0.5A 2. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for HAT3015R-EL-E
- Description：NCH/PCH POWER MOSFET 200V 0.5A 2
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：200V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta), 250mA (Ta)
- Rds On (Max) @ Id, Vgs：2.2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：120pF @ 10V, 140pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for HAT3015R-EL-E
FET, MOSFET Arrays Overview
The HAT3015R-EL-E is a silicon N/P channel power MOS FET designed for high-speed power switching applications. Manufactured by Renesas Electronics Corporation, this component features a separate configuration with two elements and built-in diodes. It operates within a minimum drain-source breakdown voltage of 200 V and supports a maximum continuous drain current of 0.5 A. The device exhibits a maximum drain-source on-resistance of 5.5 Ω. Packaged in an 8-pin Small Outline (SOP) format designated as R-PDSO-G8, it complies with RoHS standards and contains no lead.
FET, MOSFET Arrays Feature Summary
- Integrated N/P channel power MOS FET structure for complementary switching
- High-speed power switching capability optimized for rapid transitions
- Built-in diodes incorporated within the dual-element configuration
FET, MOSFET Arrays Applications
- High-speed power switching circuits
- Complementary output stages requiring integrated diodes
- Low-current power management modules
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix EL-E to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead-free certification requirements against current project standards. Check moisture sensitivity level ratings for proper storage and handling procedures during assembly.
FET, MOSFET Arrays Selection Notes
Select this component when a compact 8-pin SOP package is required for low-current applications up to 0.5 A. Ensure the 200 V breakdown voltage meets circuit safety margins. Evaluate the 5.5 Ω on-resistance against thermal dissipation constraints in the target design environment.
FET, MOSFET Arrays Part Context
This part belongs to Renesas' discrete semiconductor transistor portfolio, specifically focusing on power MOSFETs. It complements the manufacturer's broader range of analog and power control solutions used in industrial and consumer electronics.
FET, MOSFET Arrays Replacement Considerations
Consult official Renesas documentation for qualified alternative part numbers within the HAT series. Verify pin compatibility and electrical parameter equivalence before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
