HBAT-5402-TR2G

RF Diode Overview

The HBAT-5402-TR2G is a single Schottky barrier diode from Broadcom Limited, packaged in SOT-23. It features a forward voltage of 800 mV at 100 mA and a breakdown voltage of 30 V. The device exhibits a typical series resistance of 2.4 Ω and a capacitance of 3.0 pF. It supports a DC forward current of 220 mA and a peak surge current of 1.0 A. Operating temperatures range from -65°C to +150°C.

RF Diode Feature Summary

• Ultra-low series resistance for higher current handling
• Low capacitance minimizes waveshape loss
• Picosecond switching response to noise spikes

RF Diode Applications

• Circuit protection against high current transients on data lines
• High-speed switching applications
• Voltage clamping and waveshape preservation

RF Diode Procurement Notes

Verify the specific ordering suffix TR2G corresponds to the 10,000-unit 13-inch reel configuration as documented in the official datasheet. Confirm that the component is sourced directly from Broadcom or authorized distributors to ensure authenticity and traceability. Check for any recent product change notices regarding manufacturing updates.

RF Diode Selection Notes

Select this component when low series resistance is critical for managing high transient currents without excessive thermal runaway. The SOT-23 package offers a compact footprint suitable for space-constrained designs. Ensure the application requires a single diode configuration rather than the series pair found in the HBAT-540C variant.

RF Diode Part Context

This part belongs to the HBAT-540x series of high-performance Schottky diodes designed for transient suppression. The series includes variants like the HBAT-5400 (single) and HBAT-540B/C (series pairs). The HBAT-5402 specifically utilizes the SOT-23 package, distinguishing it from the SOT-323 packaged HBAT-540B and HBAT-540C models.

RF Diode Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.