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HCT7000M is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists TT Electronics/Optek Technology. Its product description is MOSFET N-CH 60V 200MA 3SMD. Review the specifications below when checking this part for your BOM.
The HCT7000M is an N-channel enhancement mode MOSFET chip housed in a 3-pin ceramic LCC package. It features a drain-source voltage of 60V and a continuous drain current of 200mA. The device exhibits a gate threshold voltage range of 0.8V to 3.0V at 1mA, with a maximum on-resistance of 5Ω at VGS=10V. Input capacitance is 60pF. Power dissipation reaches 300mW at 25°C ambient temperature. Operating temperatures span from -55°C to +150°C junction.
Verify the specific suffix for required screening levels. Standard units are commercial grade. Military variants (MTX) require MIL-PRF-19500 compliance confirmation. Ensure thermal management meets the specified resistance values for your mounting method. Check datasheet revisions for updated electrical limits before finalizing designs.
Select this component when space constraints require a footprint matching standard SOT23 plastic MOSFETs but higher reliability is needed. The ceramic package supports wider operating temperatures compared to typical plastic equivalents. Verify that the 60V rating exceeds peak circuit voltages. Confirm drive voltage compatibility with the 0.8V to 3.0V threshold range for efficient switching.
This part belongs to the HCT7000 series of N-channel enhancement mode MOS transistors manufactured by TT Electronics/Optek Technology. The series includes military screened variants like the HCT7000MTX. These devices are designed as direct replacements for JEDEC 2N7000 specifications while offering superior packaging options for harsh environments.
The datasheet states electrical characteristics are similar to the JEDEC 2N7000. Pin-out matches most SOT23 MOSFETs. No other specific substitute part numbers are listed in the provided documentation.
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