HD1530JL

Single Bipolar Transistors Overview

The HD1530JL is a high-voltage NPN power transistor manufactured by STMicroelectronics, designed for demanding applications in high-definition and new super-slim CRT displays. It features a collector-emitter breakdown voltage of 700 V and supports a maximum continuous collector current of 26 A. The device is housed in a TO-264-3 through-hole package, providing robust thermal performance with a power dissipation rating of 200 W. Key electrical characteristics include a saturation voltage of 2.5 V at specified base and collector currents, ensuring efficient switching capabilities within its operational temperature range.

Single Bipolar Transistors Feature Summary

• Engineered specifically for high-voltage requirements in high-definition and super-slim CRT display technologies
• Utilizes a TO-264-3 through-hole package to facilitate effective heat dissipation for high-power operations
• Provides high collector current capacity suitable for substantial load driving in analog and switching circuits

Single Bipolar Transistors Applications

• High-definition CRT display driver circuits
• New super-slim CRT television systems
• High-voltage power switching applications requiring robust NPN configuration

Single Bipolar Transistors Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package integrity and pin alignment prior to installation. Ensure storage conditions comply with moisture sensitivity levels to prevent degradation. Review end-of-life status as the part may be obsolete, affecting long-term supply chain stability. Validate that replacement components meet identical electrical ratings if sourcing alternatives.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation and significant current handling capabilities. The TO-264-3 package is appropriate for applications where thermal management is critical and through-hole mounting is preferred. Consider the 700 V breakdown voltage for safety margins in high-voltage environments. Evaluate the 2.5 V saturation voltage impact on overall system efficiency during conduction phases.

Single Bipolar Transistors Part Context

This NPN power transistor belongs to STMicroelectronics' discrete semiconductor lineup, targeting legacy and specialized display technologies. It complements other high-voltage transistors in the portfolio by offering specific performance metrics tailored for CRT deflection and flyback transformer drivers. The component represents a solution for manufacturers maintaining or refurbishing high-definition CRT equipment.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the part status is listed as obsolete, engineers must identify equivalent components based on matching electrical parameters such as 700 V Vceo, 26 A Ic, and TO-264-3 packaging. Cross-referencing with manufacturer obsolescence notices is recommended.