Diode Arrays HERF1007GA product image

HERF1007GA

$0.84
  • Description:DIODE ARRAY GP 800V 10A ITO220AB
  • Series:-

SKU:920451033fd8 Category: Brand:

  
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HERF1007GA is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARRAY GP 800V 10A ITO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HERF1007GA

  • Description:DIODE ARRAY GP 800V 10A ITO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):800 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):80 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 800 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package:ITO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for HERF1007GA

HERF1007GA

Diode Arrays Overview

The HERF1007GA is a glass-passivated high-efficiency fast recovery rectifier manufactured by Taiwan Semiconductor. It features a dual common cathode configuration housed in a TO-220AB-3 package for through-hole mounting. The device supports a maximum repetitive peak reverse voltage of 800V and an average forward rectified current of 10A per diode. Key electrical characteristics include a typical forward voltage of 1.7V, a maximum reverse leakage current of 10µA, and a fast recovery time of 80ns. It withstands a maximum surge current of 125A and operates within a junction temperature range of -55°C to +150°C.

Diode Arrays Feature Summary

  • Glass passivation provides mechanical strength and protection against external environmental stresses.
  • Fast recovery characteristics minimize switching losses and improve overall circuit efficiency.
  • Dual common cathode design allows for compact implementation of bridge or push-pull topologies.

Diode Arrays Applications

  • High-frequency DC-DC converters
  • Free-wheeling rectification in power supplies
  • Isolated output rectification in flyback transformers

Diode Arrays Procurement Notes

Verify the specific suffix 'GA' against the official Taiwan Semiconductor datasheet to confirm pinout and packaging details. Ensure the procurement source provides valid RoHS compliance documentation. Cross-reference the manufacturer part number with authorized distributor catalogs to avoid counterfeit components. Confirm thermal management requirements align with the TO-220AB-3 package capabilities.

Diode Arrays Selection Notes

Select this component when designing circuits requiring high-speed switching with moderate current handling. The 800V rating suits applications involving higher input voltages or significant voltage spikes. The dual common cathode structure is optimal for synchronous rectification or full-wave configurations where space efficiency is critical. Evaluate thermal dissipation needs based on the 1.7V forward voltage drop at load currents.

Diode Arrays Part Context

This component belongs to the HER series of high-efficiency rectifiers from Taiwan Semiconductor. The series utilizes glass passivation technology to enhance reliability compared to standard plastic-encapsulated diodes. The HERF1007GA specifically targets high-frequency applications where rapid reverse recovery is essential to reduce electromagnetic interference and power loss.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

Does the device support through-hole mounting?

Yes, it is available in a TO-220AB-3 package designed for through-hole installation.

What is the reverse recovery time specification?

The typical reverse recovery time is 80ns.

HERF1007GAHERF1007GA
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