HFA3096BZ

Overview

The HFA3096BZ is a silicon RF bipolar transistor array manufactured by Renesas Electronics. It integrates five dielectrically isolated transistors on a common monolithic substrate, configured as three NPN and two PNP devices. The NPN transistors offer a transition frequency (fT) of 8 GHz, while the PNP transistors provide an fT of 5.5 GHz. Both types exhibit a typical noise figure of 3.5 dB at 1 GHz. Maximum collector-emitter voltages are rated at 15 V for NPN and 12 V for PNP configurations. The device supports a maximum DC collector current of 65 mA and operates within a temperature range of -55°C to +125°C.

Feature Summary

• Integrates three NPN and two PNP transistors in a single monolithic package for compact design
• Provides low-noise performance suitable for precision high-frequency applications
• Ensures close electrical and thermal matching between individual transistors due to monolithic construction

Applications

• High-frequency amplifier circuits
• RF mixer applications
• Space and harsh environment systems requiring radiation mitigation

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and lead-free plating specifications prior to procurement. Ensure proper handling procedures are followed due to moisture sensitivity classification. Validate that the specific ordering suffix matches the required packaging format for integration into the manufacturing process.

Selection Notes

Select this component when designing UHF band circuits requiring mixed NPN/PNP configurations with high gain-bandwidth products. Consider the 16-pin SOIC narrow package constraints for PCB layout. Evaluate the 150 mW power dissipation limit against thermal management requirements. Verify that the 65 mA current rating meets the load demands of the intended application without exceeding safe operating area limits.

Part Context

The HFA3096BZ belongs to the HFA3096 series of ultra-high frequency transistor arrays fabricated using the complementary bipolar UHF-1 process. This series includes variants such as the all-NPN HFA3046 and all-PNP HFA3128. These arrays are engineered for high-frequency performance and reliability, often utilized in military and aerospace contexts where radiation hardness and precise matching are critical.

Replacement Considerations

Direct substitutes include the HFA3046BZ for all-NPN applications and the HFA3127BZ for similar high-frequency needs. Verify pinout compatibility and voltage ratings before substitution. Consult official datasheets for detailed electrical parameter comparisons to ensure functional equivalence in the target circuit.