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The HFA3102B96 is a dual long-tailed pair transistor array manufactured by Renesas Electronics Corporation. It consists of an all-NPN configuration configured as dual differential amplifiers with tail transistors, based on the Intersil bonded wafer UHF-1 SOI process. The device achieves a high transition frequency (fT) of 10GHz and a power gain-bandwidth product of 5GHz. Key electrical characteristics include a current gain (hFE) of 70, a noise figure of 3.5dB, and collector leakage currents maintained below 0.01nA. It offers excellent hFE and VBE matching over temperature. The component is housed in a 14-pin SOICN package, operates within a temperature range of -40°C to +85°C, and is RoHS compliant.
Verify the specific suffix B96 indicates reel packaging versus the standard tube variant. Confirm RoHS compliance status for the specific batch, as older stock may differ. Check obsolescence status carefully, as this part number is listed as obsolete in available records. Ensure the 14-pin SOICN package matches the design footprint requirements.
Select this component when dual matched NPN differential pairs are required for high-frequency signal processing. The UHF-1 SOI process makes it suitable for applications demanding low noise and high linearity. Compare against the HFA3102BZ if reel packaging is not strictly necessary. Consider thermal management within the specified -40°C to +85°C operating range.
The HFA3102 series belongs to Renesas' portfolio of high-performance analog transistor arrays derived from Intersil's legacy UHF-1 Silicon-On-Insulator technology. This family is designed for RF and microwave applications where discrete transistor matching is critical. The HFA3102 specifically targets differential amplifier topologies requiring high speed and low noise performance.
The HFA3102BZ is a pin-compatible alternative differing primarily in carrier type (tube vs. reel). No other direct functional substitutes are documented in the provided source material.