HFA3102BZ96

HFA3102BZ96

$8.39
  • Description:RF TRANS 6 NPN 12V 10GHZ 14-SOIC
  • Series:-

SKU:43142ec7d011 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS 6 NPN 12V 10GHZ 14-SOIC
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:6 NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:10GHz
  • Noise Figure (dB Typ @ f):1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
  • Gain:12.4dB ~ 17.5dB
  • Power - Max:250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 10mA, 3V
  • Current - Collector (Ic) (Max):30mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:14-SOIC
  • Grade:-
  • Qualification:-

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HFA3102BZ96

Overview

The HFA3102BZ96 is an obsolete RF bipolar transistor array manufactured by Renesas Electronics Corporation. It consists of dual long-tailed NPN pairs configured as differential amplifiers with tail transistors, housed in a 14-lead SOIC package on a tape and reel carrier. The device utilizes a bonded wafer UHF-1 SOI process to achieve a transition frequency (fT) of 10 GHz. Key electrical specifications include a minimum DC current gain (hFE) of 40, a maximum collector-emitter voltage (VCEO) of 8 V, and a maximum emitter-base voltage (VEBO) of 12 V. The continuous collector current is rated at 30 mA, with a power dissipation of 250 mW. It operates within a temperature range of -40°C to +85°C.

Feature Summary

  • High transition frequency performance enabled by UHF-1 SOI process technology
  • Excellent hFE and VBE matching characteristics maintained over temperature
  • Low collector leakage currents maintained below 0.01 nA

Applications

  • Single balanced mixers
  • Wide band amplification stages
  • Differential amplifiers
  • Automatic gain control circuits
  • Frequency doublers and tripplers

Procurement Notes

This component is officially classified as obsolete and has been discontinued by the manufacturer. Verification of availability should focus on remaining stock from authorized distributors or secondary market suppliers rather than direct manufacturing orders. Buyers must confirm the specific lot date code and physical condition upon receipt, as inventory levels for end-of-life parts fluctuate rapidly. Ensure that any replacement sourcing strictly adheres to quality assurance standards to mitigate risks associated with aged semiconductor components.

Selection Notes

Designers requiring this specific configuration should evaluate the standard tube-packaged version, HFA3102BZ, which shares identical electrical characteristics but differs only in packaging format. The BZ96 suffix specifically denotes the tape and reel carrier type intended for automated surface-mount assembly lines. If reel packaging is not strictly required for the production process, the tube variant may offer broader supply chain accessibility. Verify pin compatibility with existing footprints before finalizing the selection.

Part Context

The HFA3102 belongs to the HFA3102 series of ultra-high-frequency transistor arrays produced under the Intersil brand, now part of Renesas Electronics. These devices are engineered for high-performance radio frequency and microwave applications where precise differential signal processing is critical. The series leverages silicon-on-insulator technology to minimize parasitic capacitance and maximize speed, distinguishing it from standard discrete bipolar transistor solutions.

Replacement Considerations

The primary alternative is the HFA3102BZ, which offers the same functional specifications in a tube package instead of a tape and reel. No other direct cross-model substitutes are documented in official sources.

HFA3102BZ96HFA3102BZ96
$8.39
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