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The HFA3128B is an ultra high frequency transistor array fabricated using Intersil’s complementary bipolar UHF-1 process. It contains five dielectrically isolated PNP transistors on a common monolithic substrate, housed in a 16-SOIC package. The device provides a transition frequency (fT) of 5.5GHz and a typical noise figure of 3.5dB at 1GHz. Maximum collector current is rated at 65mA with a maximum power dissipation of 150mW. The unit supports a junction temperature up to 150°C and features complete isolation between transistors.
Verify component authenticity through authorized Renesas or Intersil channels due to discontinued status. Confirm RoHS compliance and lead-free anneal specifications if required by assembly standards. Check datasheet revisions for any parameter updates. Ensure storage conditions meet moisture sensitivity level requirements prior to soldering.
Select this component when designing circuits requiring multiple matched PNP RF transistors with low noise characteristics. The 5.5GHz fT makes it suitable for frequencies below the NPN variant's 8GHz limit. Consider the 16-SOIC package constraints for PCB layout. Verify that the 15V collector-emitter breakdown voltage meets the circuit's supply requirements.
The HFA3128B belongs to the HFA3046, HFA3096, HFA3127, and HFA3128 family of ultra high frequency transistor arrays. While the HFA3127 contains NPN transistors, the HFA3128 specifically utilizes PNP technology. These devices share the same UHF-1 fabrication process and physical footprint, differing primarily in transistor polarity and associated gain parameters.
The HFA3128BZ is a pin-compatible variant offering Pb-Free plus Anneal construction. Verify that the RoHS compliant version meets environmental regulations for the target application without altering electrical performance.