HFA3128R

Overview

The HFA3128R is an ultra-high frequency transistor array fabricated using the Renesas complementary bipolar UHF-1 process. It consists of five dielectrically isolated PNP transistors on a common monolithic substrate, providing close electrical and thermal matching. The device features a transition frequency (fT) of 5.5 GHz for the PNP transistors and exhibits a typical noise figure of 3.5 dB at 1 GHz. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 8 V, a maximum collector current (IC) of 65 mA, and a power dissipation (Pd) of 150 mW. The minimum DC current gain (hFE) is specified as 20 at 10 mA and 2 V. The operating temperature range spans from -55°C to +125°C.

Feature Summary

• Monolithic construction ensures tight electrical and thermal matching among the five integrated transistors.
• Dielectric isolation provides high-frequency performance with low noise characteristics suitable for sensitive RF circuits.
• Individual terminal access allows for maximum application flexibility in circuit design.

Applications

• High-frequency amplifier stages
• RF mixer applications
• Harsh environment systems requiring MIL-STD-883 compliance

Procurement Notes

Verify component authenticity through authorized channels due to potential availability constraints. Confirm RoHS status and lead-free plating specifications against specific manufacturing lot requirements. Check for end-of-life notifications or production change notices that may affect long-term supply stability. Ensure handling procedures account for moisture sensitivity levels during storage and assembly processes.

Selection Notes

Select this component when designing circuits requiring matched PNP arrays with high transition frequencies. Consider the 5.5 GHz fT limit for signal bandwidth requirements. Evaluate the 150 mW power dissipation capability against thermal management strategies. Verify compatibility with existing biasing networks given the 8 V VCEO rating.

Part Context

The HFA3128R belongs to the HFA3128 series of ultra-high frequency transistor arrays. It is part of a family that includes NPN variants like the HFA3046 and mixed NPN-PNP types like the HFA3096. These devices are designed for high-performance RF applications where component matching and low noise are critical. The series utilizes a specialized complementary bipolar process optimized for UHF operations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer resources for potential cross-references or updated product line replacements if this specific variant is discontinued.