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Product Detailed Parameters
- Description：RF TRANS 2 PNP 9V 7GHZ 6-SOT
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Transistor Type：2 PNP (Dual)
- Voltage - Collector Emitter Breakdown (Max)：9V
- Frequency - Transition：7GHz
- Noise Figure (dB Typ @ f)：5.2dB @ 900MHz
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 10mA, 2V
- Current - Collector (Ic) (Max)：26mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：6-SOT
- Grade：-
- Qualification：-
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Overview
The HFA3135IH96 is a silicon RF bipolar transistor manufactured by Renesas Electronics Corporation. It features a dual PNP configuration housed in an SOT-23 package. The device operates at frequencies up to 7 GHz with a minimum DC collector-to-base gain (hfe) of 15. Key electrical limits include a maximum collector-emitter voltage (VCEO) of 11 V, an emitter-base voltage (VEBO) of 4.5 V, and a continuous collector current of 26 mA. It supports an operating temperature range from -40°C to +85°C.
Feature Summary
- Dual matched PNP transistor structure for balanced RF performance
- Silicon technology optimized for high-frequency operation up to 7 GHz
- Compact SOT-23 surface-mount packaging
Applications
- RF amplifier circuits requiring matched dual transistors
- High-frequency signal processing systems
- Wireless communication infrastructure components
Procurement Notes
Verify the exact part number suffix against official Renesas documentation, as variations such as HFA3135IHZ96 may indicate specific reel or tape configurations. Confirm RoHS compliance status through the manufacturer's datasheet before procurement. Ensure storage conditions account for moisture sensitivity levels specified in the component data sheet to prevent damage during assembly.
Selection Notes
Select this component when a dual PNP RF bipolar transistor is required for applications operating below 7 GHz. Compare the 26 mA current limit and 11 V voltage rating against circuit requirements. Consider the SOT-23 package constraints for thermal management and board space. Verify that the minimum hfe of 15 meets the gain specifications of the target design.
Part Context
This component belongs to the HFA3135 series of RF bipolar transistors produced by Renesas Electronics. It is functionally related to other variants in the family, such as the NPN-based HFA3134, which shares similar voltage and current ratings but differs in polarity and frequency characteristics. The series targets high-frequency analog and RF applications requiring matched transistor pairs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official Renesas documentation for qualified alternatives or cross-reference guides.
