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The HFA3135IHZ96 is a dual PNP RF bipolar transistor manufactured by Renesas Electronics. It utilizes silicon technology and operates at frequencies up to 7 GHz. The device features a minimum DC collector-base gain (hfe) of 15, with a maximum collector-emitter voltage (VCEO) of 11 V and an emitter-base voltage (VEBO) of 4.5 V. Continuous collector current is rated at 26 mA. It functions within a temperature range of -40°C to +85°C and is housed in an SOT-23 package.
Verify the specific suffix '96' against official Renesas documentation to confirm reel specifications and moisture sensitivity levels. Ensure compatibility with RoHS directives as indicated in manufacturer datasheets. Confirm lead availability through authorized distributors, noting that supply chain status may vary based on production cycles and regional distribution agreements.
Select this component when a dual PNP configuration is required for RF applications up to 7 GHz. Compare hfe minimums and voltage ratings against circuit requirements. Consider the SOT-23 footprint for space-constrained designs. Verify thermal management needs within the specified operating temperature range of -40°C to +85°C.
This part belongs to the HFA3135 series of RF bipolar transistors from Renesas/Intersil. It is designed for high-frequency analog applications. The series typically includes complementary NPN counterparts like the HFA3134. These devices are engineered for precision matching in differential or push-pull RF stages.
Check for direct pin-compatible alternatives within the HFA313x family. Verify electrical parameters such as VCEO, VEBO, and frequency limits before substitution. Consult Renesas engineering support for validated cross-reference data.