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Product Detailed Parameters
- Description：HG24N60D1D
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The HG24N60D1D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a maximum collector current of 24 A and a collector-emitter breakdown voltage of 600 V. The device is housed in a TO-220AB package with the case connected to the collector. This component is designed for power switching applications requiring high efficiency.
Feature Summary
- Single IGBT configuration with integrated anti-parallel diode
- Low conduction loss characteristics for improved efficiency
- Ultra-fast switching performance capabilities
Applications
- Discrete semiconductor power switching circuits
- Industrial motor drive systems
- High-frequency power conversion units
Procurement Notes
Verify the manufacturer origin, as this part number has been associated with multiple entities including Intersil, Fairchild, and Renesas due to corporate acquisitions. Confirm the specific datasheet version matches your design requirements. Ensure the package type aligns with thermal management needs. Check for lead-free compliance if required by project specifications. Validate active status through authorized distributors.
Selection Notes
Select this component for applications requiring a 600V rating and 24A continuous current handling. The TO-220AB package facilitates standard mounting solutions. Consider the low conduction loss feature for thermal optimization in dense designs. Verify gate drive compatibility for ultra-fast switching operation. Ensure the built-in diode meets reverse recovery requirements for the specific circuit topology.
Part Context
This IGBT belongs to the broader family of power transistors historically produced by Harris Corporation. Following industry consolidations, related documentation and manufacturing rights have been managed by entities such as Intersil, Fairchild Semiconductor, and Renesas. The HGTP12N60C3D is a closely related variant within this lineage, sharing similar voltage and current ratings but differing in specific current capacity and packaging details.
Replacement Considerations
HGTP12N60C3D is a documented substitute part number found in official component databases from manufacturers like Renesas and Fairchild. Both parts share the 600V/24A specification and TO-220AB package. Verify electrical parameter equivalence before substitution.
