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Product Detailed Parameters
- Description：IGBT NPT 1200V 35A TO-263
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：35 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 10A
- Power - Max：298 W
- Switching Energy：320µJ (on), 800µJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：23ns/165ns
- Test Condition：960V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The HGT1S10N120BNST is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the NPT series manufactured by onsemi. It features a 1200V collector-emitter voltage rating and a continuous collector current of 10A at 25°C. The device utilizes Non-Punch-Through (NPT) technology to ensure stable switching performance. It is housed in a TO-247AD package, providing robust thermal management capabilities for high-power applications.
Feature Summary
- Non-Punch-Through (NPT) technology ensures stable switching characteristics across operating temperatures.
- Designed for low conduction losses with optimized forward voltage drop.
- Robust short-circuit withstand capability for enhanced system reliability.
Applications
- Induction heating systems
- Switched-mode power supplies (SMPS)
- Motor control drives
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout configuration and packaging type. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as these details are subject to change and require real-time verification before procurement.
Selection Notes
Select this component for applications requiring 1200V blocking voltage and moderate current handling up to 10A. Ensure the gate drive circuitry supports the required threshold voltage and that the thermal design accommodates the power dissipation limits specified in the datasheet for the intended ambient temperature conditions.
Part Context
This IGBT belongs to onsemi's discrete power transistor lineup, specifically designed for medium-power switching applications. It complements other devices in the HGT series, offering a balance between switching speed and conduction efficiency suitable for industrial and consumer electronics power stages.
Replacement Considerations
Consult the official onsemi cross-reference guide for verified substitutes. Potential alternatives may include other 1200V, 10A NPT IGBTs in TO-247 packages from onsemi or other manufacturers, provided electrical parameters and pinouts match exactly.
