HGT1S12N60A4DS

$3.15

Description：IGBT 600V 54A TO-263AB
Series：-

SKU:6f9a8291dd9a Category: Single IGBTs Brand: Fairchild Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 54A TO-263AB
Series：-
Mfr：Fairchild Semiconductor
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：54 A
Current - Collector Pulsed (Icm)：96 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 12A
Power - Max：167 W
Switching Energy：55µJ (on), 50µJ (off)
Input Type：Standard
Gate Charge：120 nC
Td (on/off) @ 25°C：17ns/96ns
Test Condition：390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)：30 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263AB
Grade：-
Qualification：-

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HGT1S12N60A4DS

Overview

The HGT1S12N60A4DS is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It integrates an anti-parallel hyperfast diode and utilizes the TA49335 IGBT and TA49371 diode development types. The device features low on-state conduction loss with a temperature-compensating characteristic between 25°C and 150°C. Key electrical parameters include a collector current of 12A at 390V for >100kHz operation, a typical fall time of 70ns at 125°C junction temperature, and 600V switching Safe Operating Area (SOA) capability.

Feature Summary

Combines high input impedance MOSFET gate drive with low on-state bipolar transistor conduction loss
Integrated anti-parallel hyperfast diode for high-frequency switch mode power supply applications
Temperature compensating characteristics ensure moderate voltage drop variation across operating temperatures

Applications

High frequency switch mode power supplies
Motor control operations requiring high voltage switching
Applications demanding low conduction losses at high frequencies

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm datasheet revision status to ensure alignment with specific application requirements. Check for RoHS compliance documentation if environmental regulations apply. Validate package integrity upon receipt to prevent handling damage.

Selection Notes

Select this component for designs requiring integrated freewheeling diodes in high-frequency environments. Ensure thermal management supports the specified junction temperature limits. Verify that the 70ns fall time meets the system's switching speed constraints. Confirm compatibility with the required gate drive voltage levels for optimal performance.

Part Context

This part belongs to the SMPS Series of N-channel IGBTs from Fairchild Semiconductor. It represents a specialized solution for high-voltage switching where efficiency and speed are critical. The integration of the hyperfast diode reduces component count compared to discrete solutions.