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Product Detailed Parameters
- Description：IGBT 600V 27A TO-262
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：27 A
- Current - Collector Pulsed (Icm)：110 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 12A
- Power - Max：104 W
- Switching Energy：304µJ (on), 250µJ (off)
- Input Type：Standard
- Gate Charge：68 nC
- Td (on/off) @ 25°C：26ns/150ns
- Test Condition：480V, 12A, 25Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package：TO-262 (I2PAK)
- Grade：-
- Qualification：-
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Overview
The HGT1S12N60B3 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation, part of the UFS series. It integrates a hyperfast anti-parallel diode within a single TO-247 package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 24 A at 25°C case temperature. Key electrical parameters include a typical fall time of 210 ns at 150°C junction temperature and a short-circuit rating capability.
Feature Summary
- Combines high input impedance MOS gate control with low on-state conduction loss characteristics of bipolar transistors.
- Features a hyperfast anti-parallel diode integrated in parallel with the IGBT for efficient switching applications.
- Designed with rugged construction supporting short-circuit ratings for enhanced reliability in power circuits.
Applications
- High-frequency power switching circuits requiring fast recovery characteristics.
- Motor drive systems utilizing insulated gate bipolar transistors.
- Inverter topologies benefiting from integrated anti-parallel diode functionality.
Procurement Notes
Verify manufacturer lineage as Harris Corporation assets were acquired by Fairchild Semiconductor and subsequently onsemi. Confirm that the specific suffix B3 corresponds to the intended packaging and pinout configuration. Request official datasheets to validate electrical limits against original Harris specifications before integration into designs.
Selection Notes
Select this component for applications requiring 600V blocking capability and 24A continuous current handling. The integrated hyperfast diode eliminates the need for external freewheeling diodes in certain bridge configurations. Ensure thermal management solutions accommodate the specified power dissipation limits under operating conditions.
Part Context
This component belongs to the UFS Series of N-channel IGBTs developed by Harris Corporation. The series is characterized by its combination of MOSFET-like drive requirements and bipolar transistor efficiency. The HGT1S12N60B3 variant specifically denotes the TO-247 package form factor with integrated diode functionality.
Replacement Considerations
Equivalent parts include the HGTG12N60C3D and HGT1S12N60C3DRS9A. Verify pin compatibility and thermal resistance values when substituting these models. Cross-reference datasheets from Fairchild or onsemi to ensure parameter alignment with original Harris specifications.
