HGT1S12N60B3D

$1.16

Description：IGBT 600V 27A I2PAK
Series：-

SKU:66151bd5d951 Category: Single IGBTs Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 27A I2PAK
Series：-
Mfr：Harris Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：27 A
Current - Collector Pulsed (Icm)：110 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 12A
Power - Max：104 W
Switching Energy：304µJ (on), 250µJ (off)
Input Type：Standard
Gate Charge：78 nC
Td (on/off) @ 25°C：26ns/150ns
Test Condition：480V, 12A, 25Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package：I2PAK (TO-262)
Grade：-
Qualification：-

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HGT1S12N60B3D

Overview

The HGT1S12N60B3D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a collector-emitter maximum voltage of 600 V and a continuous collector current rating of 27 A at 25°C. The device has a maximum power dissipation of 104 W and operates within a junction temperature range of -55°C to 150°C. Packaged in a TO-262-3 Long Leads (I²PAK) through-hole configuration, it offers a pulsed collector current capability of 110 A.

Feature Summary

Single N-channel IGBT configuration for high-voltage switching applications
Through-hole mounting in TO-262-3 Long Leads package for robust mechanical connection
Wide operating temperature range supporting extreme thermal environments

Applications

High-frequency power switching circuits
Motor drive inverters
Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the manufacturer status as Harris Corporation may have undergone corporate restructuring or acquisition. Confirm that the specific suffix B3D corresponds to the intended electrical characteristics and packaging variant. Check for end-of-life notifications or obsolescence notices from authorized distributors. Ensure ESD handling procedures are followed during storage and assembly due to gate sensitivity.

Selection Notes

Select this component when a 600 V blocking voltage and 27 A continuous current capacity are required in a through-hole format. Consider the 104 W power dissipation limit and thermal management requirements for the TO-262 package. Evaluate the 110 A pulsed current rating against transient load conditions. Compare gate charge specifications with driver capabilities to ensure adequate switching speed.

Part Context

This IGBT belongs to the broader family of single-channel power transistors designed for medium-power industrial applications. It utilizes silicon technology for reliable operation under high stress. The TO-262 package provides a balance between thermal performance and ease of manual or automated insertion into printed circuit boards.