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Product Detailed Parameters
- Description：IGBT 600V 27A TO-263AB
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：27 A
- Current - Collector Pulsed (Icm)：110 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 12A
- Power - Max：104 W
- Switching Energy：304µJ (on), 250µJ (off)
- Input Type：Standard
- Gate Charge：78 nC
- Td (on/off) @ 25°C：26ns/150ns
- Test Condition：480V, 12A, 25Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AB
- Grade：-
- Qualification：-
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Overview
The HGT1S12N60B3DS is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a single N-channel configuration with a built-in anti-parallel diode, housed in a TO-263AB surface-mount package. The device supports a maximum collector current of 24 A and a collector-emitter breakdown voltage of 600 V. Key electrical characteristics include low conduction loss and ultra-fast switching performance, making it suitable for high-efficiency power conversion applications.
Feature Summary
- Combines MOSFET input impedance with bipolar transistor low on-state conduction loss
- Integrated hyperfast anti-parallel diode for efficient commutation
- Designed for low thermal resistance and high mechanical robustness
Applications
- Active rectifiers
- Half-controlled bridge circuits
- High-frequency power supplies
Procurement Notes
Verify the manufacturer origin carefully, as Harris Corporation's semiconductor assets were acquired by Intersil and subsequently ON Semiconductor. Ensure the datasheet matches the specific suffix 'RS9A' or 'B3DS' to confirm pinout and packaging consistency. Request batch traceability documentation to ensure compliance with automotive or industrial quality standards if required for the end application.
Selection Notes
Select this component when a compact surface-mount IGBT with integrated freewheeling diode is required for 600V applications. The 24A rating at 25°C case temperature dictates adequate heatsinking must be provided. Compare switching speed requirements against the typical fall time specifications to ensure compatibility with the target switching frequency and electromagnetic interference constraints.
Part Context
This part belongs to the UFS (Ultra Fast Switching) series of N-channel IGBTs. It shares functional similarities with the HGTG12N60C3D but may differ in specific packaging or suffix designations. The series is characterized by optimized trade-offs between conduction loss and switching speed for medium-power industrial applications.
Replacement Considerations
Direct substitutes include the HGTG12N60C3D from Fairchild/ON Semiconductor. Verify that the replacement maintains the same TO-263AB footprint and electrical ratings before implementation.
