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The HGT1S12N60C3 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation, part of the rugged UFS series. It features a single configuration with an integrated anti-parallel ultrafast diode. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 24 A at 25°C. Packaged in a TO-263AB (D2PAK) surface-mount format, it offers a power dissipation rating of 104 W. The component operates within a junction temperature range of -40°C to +150°C, designed for high-reliability switching applications requiring low conduction loss.
This component belongs to the HGTG/HGTP/HGT1S12N60C3 family of IGBTs produced by Harris Corporation, later acquired by Fairchild Semiconductor and subsequently onsemi. The 'HGT1S' prefix specifically denotes the surface-mount TO-263 package variant with built-in diode functionality, distinguishing it from through-hole equivalents like the HGTP or HGTG series.
Verified equivalent part numbers include HGT1S12N60C3DRS9A and HGT1S12N60C3D. These variants share identical electrical specifications and pinout configurations, ensuring functional compatibility in existing designs.