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The HGT1S14N36G3VLS is a 14A, 360V N-Channel Logic Level Voltage Clamping IGBT manufactured by Fairchild Semiconductor. It features an active voltage clamp between the collector and gate for Self Clamped Inductive Switching (SCIS). The device includes internal diodes for ESD protection and both series and shunt resistors in the gate circuit. It operates with a junction temperature range of -40°C to +175°C and has a Collector-Emitter Breakdown Voltage (BV_CER) of 390V at 25°C. Continuous collector current is rated at 18A at 25°C and 14A at 100°C.
Verify the complete part number including the 'S' suffix when ordering the TO-263AB package variant. Confirm that the component is sourced from Fairchild Semiconductor or authorized distributors. Check for the '9A' suffix if tape and reel packaging is required for the TO-263AB version. Ensure handling precautions are followed due to ESD sensitivity.
Select this component for applications requiring logic level gate drive and integrated voltage clamping. Consider the thermal resistance of 1.5°C/W and power dissipation limits when designing heat sinks. Verify that the operating voltage does not exceed the 390V breakdown rating under all conditions. Evaluate the gate charge requirements against the driving circuit capabilities.
This device belongs to the family of 14A, 360V N-Channel Logic Level Voltage Clamping IGBTs. Related part numbers include HGTP14N36G3VL (TO-220AB package) and HGT1S14N36G3VL (TO-262AA package). All variants share identical electrical specifications but differ in physical packaging.
Direct replacements within the same family include HGTP14N36G3VL and HGT1S14N36G3VL. These parts offer identical electrical performance but utilize different packages (TO-220AB and TO-262AA respectively). Ensure mechanical fit and thermal management solutions are compatible with the alternative package type.