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Product Detailed Parameters
- Description：IGBT 445V 25A TO-263AB
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：445 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：136 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：26 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AB
- Grade：-
- Qualification：-
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Overview
The HGT1S14N41G3VLS is an Insulated Gate Bipolar Transistor manufactured by Fairchild Semiconductor. It features a single N-Channel configuration housed in a TO-263AB (D2PAK-3) package with the case connected to the collector. The device supports a maximum collector current of 27 A and a collector-emitter breakdown voltage of 490 V. Key electrical parameters include a maximum gate-emitter threshold voltage of 2.5 V, a maximum gate-emitter voltage of 10 V, and a maximum fall time of 15000 ns. The component is rated for operation at temperatures up to 175 °C.
Feature Summary
- Integrated design includes a built-in diode and resistor within the single configuration.
Applications
- High-voltage power switching applications requiring robust thermal performance.
Procurement Notes
Verify the manufacturer origin as Fairchild Semiconductor, noting that intellectual property rights may have transferred to ON Semiconductor. Confirm the specific suffix G3VLS matches the required lead-free and RoHS compliance status if applicable, although some records indicate non-compliance. Ensure the D2PAK-3 package type aligns with PCB footprint requirements before procurement.
Selection Notes
Select this component when a 490V rating and 27A continuous current capacity are required in a surface-mount D2PAK form factor. Consider the 15000 ns fall time for switching frequency limitations. Verify that the integrated internal resistor and diode meet circuit topology needs without external components.
Part Context
This part belongs to the Fairchild IGBT family, specifically utilizing the TO-263AB surface-mount package. It serves as a high-power discrete semiconductor device designed for efficient conduction and switching in industrial and consumer power electronics systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the 490V/27A specifications and D2PAK-3 package constraints manually.
